T Series

Flexible Electronics & Organic Semiconductor

Item

Description

Name

Time of Flight

Outline

A recipe to measure Charge Carrier Mobility of organic semiconductor materials by using a pulse laser and a high-speed electrical measure unit. The temperature dependency can be evaluated by configuring a cryogenic chamber with the TOF system.

Metadata

Dispersive, Bias Voltage[V], Thickness[um], Transit Time[Sec], t1/2[Sec], y_base[A], Mobility[cm2V-1s-1], E1/2[(V/cm)1/2]

Eigen Plot(Example)

1) Transit Time & Mobility

Item

Description

Name

Transient Photocurrent Response

Outline

A recipe to obtain Transient Photocurrent by applying bias light and measuring Transient Photocurrent Response while irradiating pulsed light when the solar cell is short circuited. The photocurrent is measured in a predetermined time period immediately after the pulsed light irradiation, the measured photocurrent value is plotted as a function of time, and the value of the exponential decay constant is automatically extracted from the transient photocurrent measurement data, and the transient extracts the charge collection time of the solar cell from the response characteristics.

Metadata

Decay Constant[sec], △Isc(Pulse Photocurrent, mA), Isc0(Bias Photocurrent, mA), Charge Carrier Collection Time[sec], Diffusion Coefficient[cm2/sec], Isc after pulse turn-off[mA], Isc @ 0.5usec~1sec after pulse turn-off[mA]

Eigen Plot(Example)

1) Transient Photocurrent

Item

Description

Name

Transient Photovoltage Response

Outline

A recipe to obtain Transient Photovoltage by applying bias light and measuring Transient Photovoltage Response while irradiating pulsed light when the solar cell is open circuited. The photovoltage is measured in a predetermined time period immediately after the pulsed light irradiation, the measured photovoltage value is plotted as a function of time, and the value of the exponential decay constant is automatically extracted from the transient photovoltage measurement data, and the transient extracts the charge life time of the solar cell from the response characteristics.

Metadata

Decay Constant[sec], △Voc(Pulse Photovoltage, V), Voc0(Bias Photovoltage, V), Charge Carrier Lifetime(Charge Lifetime, sec), Voc after pulse turn-off[V], Voc @ 0.5usec~1sec after pulse turn-off[V]

Eigen Plot(Example)

1) Transient Photovoltage

Item

Description

Name

Charge Extraction

Outline

Recipe of measuring and extracting the current by turning off white light bias and voltage to solar cell. As soon as turning off the white light and voltage, measuring current in a predetermined time interval and plotting data as function of time with extracted current, so charge density of solar cell is calculated from the extracted light characteristics.

Metadata

Bias LED Current[mA], Bias Voltage[V], Temperature[℃], Extracted Charge[C], Charge Carrier Density[cm3], I after pulse turn-off[mA], I @ 0.5usec~1msec after pulse turn-off[mA]

Eigen Plot(Example)

1) CE Transient Photocurrent

Item

Description

Name

Charge Extraction By Linearly Increasing Voltage

Outline

Recipe of extraction obtaining the extracted current by linearly increasing voltage after applying pulsed light to solar cell. As soon as applying pulsed light to solar cell, measuring current in a predetermined time interval and plotting data as function of time with extracted current, so charge density and carrier mobility of solar cell is calculated from the extracted light characteristics.

Metadata

Pulse LED Current[mA], Pulse LED Wavelength[nm], Bias LED Current[mA], Bias Width[msec], Pulse Width[usec], Delay Time[usec], LIV Amplitude[V], LIV Offset Voltage[V], LIV Width[usec], Temperature[℃], Charge Carrier Mobility[cm2/Vs], Charge Carrier Density[cm3], Relative Permittivity, I after pulse turn-off[mA], I @ 0.5usec~1sec after pulse turn-off[mA]

Eigen Plot(Example)

1) CELIV Transient Photocurrent

Item

Description

Name

Capacitance Voltage

Outline

Recipe to obtain a complex impedance, an absolute value and a phase difference by simultaneously measuring a sine wave voltage and a current response signal by changing an offset voltage while applying a sine wave AC perturbation voltage of a specific frequency with a solar cell. It plot the imaginary value of the complex impedance measured at a specific frequency and the capacitance value obtained by the model of equivalent circuit as a function of the offset voltage, and automatically extract a capacitance value and a geometric characteristic value at a specific off set voltage from the capacitance-voltage measured data. The built-in voltage and doping density can be extracted from the frequency response characteristic of a voltage.

Metadata

Perturbation Amplitude[V], Perturbation Frequency[Hz], Start/End Offset Voltage[V], Sweep Direction, Temperature[℃], Geometric Capacitance[nF], Built-in Voltage[V], Doping Density[cm3], Relative Permittivity, C @ -1.0~1.0 V[nF]

Eigen Plot(Example)

1) C–V Spectroscopy

Item

Description

Name

Capacitance Frequency

Outline

Recipe to obtain a complex impedance, an absolute value and a phase difference by simultaneously measuring a sine wave voltage and a current response signal while applying a sine wave AC perturbation voltage of a specific frequency with a solar cell. It plot the imaginary value of the complex impedance measured by scanning frequency and the capacitance value obtained by the model of equivalent circuit as a function of the frequency, and automatically extract a capacitance value and a geometric characteristic value at a specific frequency from the capacitance-frequency measured data. The charge carrier mobility can be extracted from the frequency response characteristic.

Metadata

Perturbation Amplitude[V], Perturbation Frequency[Hz], Start/End Offset Voltage[V], Sweep Direction, Temperature[℃], Geometric Capacitance[nF], Charge Carrier Mobility[cm2/Vs], Relative Permittivity, C @ 1.0MHz~1.0mMHz[nF]

Eigen Plot(Example)

1) C–F Spectroscopy

Item

Description

Name

Intensity Modulated Photocurrent Spectroscopy

Outline

Recipe to obtain a complex impedance, an absolute value and a phase difference by simultaneously measuring a sine wave light and a photocurrent response signal by applying bias light irradiating sine wave AC perturbation light at a specific frequency while a short-circuited solar cell. The impedance spectrum can be measured by scanning frequency of the certain frequency range, so plot the real and imaginary values of complex impedance as a function of the frequency. It automatically extracts an impedance value and a geometric characteristic value at a specific frequency from the complex impedance data. The charge carrier collection time can be extracted from the frequency response characteristic.

Metadata

Perturbation LED Current Amplitude[mA], Perturbation LED Current Offset[mA], Perturbation LED Wavelength[nm], Bias LED Current[mA], Start/End Frequency[Hz], # of Frequencies, Sweep Direction, Frequency Scale, Current Amplification, Osc. Coupling mode[AC/DC], Temperature, f @ Local Maximum[Hz], Charge Carrier Collection Time[sec], Diffusion Coefficient[cm2/sec], ReF @ 1 MHz ~ 1mHz, ImF[arb.] @ 1 MHz ~ 1mHz[arb.]

Eigen Plot(Example)

1) Nyquist Plot

Item

Description

Name

Intensity Modulated Photovoltage Spectroscopy

Outline

Recipe to obtain a complex impedance, an absolute value and a phase difference by simultaneously measuring a sine wave light and a photocurrent response signal by applying bias light irradiating sine wave AC perturbation light at a specific frequency while a open-circuited solar cell. The impedance spectrum can be measured by scanning frequency of the certain frequency range, so plot the real and imaginary values of complex impedance as a function of the frequency. It automatically extracts an impedance value and a geometric characteristic value at a specific frequency from the complex impedance data. The charge carrier lifetime time can be extracted from the frequency response characteristic.

Metadata

Perturbation LED Current Amplitude[mA], Perturbation LED Current Offset[mA], Perturbation LED Wavelength[nm], Bias LED Current[mA], Start/End Frequency[Hz], # of Frequencies, Sweep Direction, Frequency Scale, Current Amplification, Osc. Coupling mode[AC/DC], Temperature, f @ Local Maximum[Hz], Charge Carrier Lifetime[sec], ReF @ 1 MHz ~ 1mHz, ImF[arb.] @ 1 MHz ~ 1mHz[arb.]

Eigen Plot(Example)

1) Nyquist Plot